English
简体中文
RES 20K OHM 0.5% 1/16W 0402
MOSFET N-CH 80V 6.7A 8SO
CONN D-SUB HD RCPT 78P VERT SLDR
NETWORK SWITCH-MANAGED 5 PORT
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 80 V |
| 电流 - 连续漏极 (id) @ 25°c: | 6.7A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 6V, 10V |
| rds on (max) @ id, vgs: | 16.5mOhm @ 10A, 10V |
| vgs(th) (最大值) @ id: | 2V @ 250µA (Min) |
| 栅极电荷 (qg) (max) @ vgs: | 41 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.56W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-SO |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STL115N10F7AGSTMicroelectronics |
MOSFET N-CH 100V 107A POWERFLAT |
|
NTNS3A91PZT5GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 223MA 3XLLGA |
|
IRF6775MTRPBFIR (Infineon Technologies) |
MOSFET N-CH 150V 4.9A DIRECTFET |
|
FQPF2N80Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 1.5A TO220F |
|
NVD14N03RT4GRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPP70N10S3L12AKSA1IR (Infineon Technologies) |
MOSFET N-CH 100V 70A TO220-3 |
|
CSD19532KTTTTexas Instruments |
MOSFET N-CH 100V 200A DDPAK |
|
BUK7M15-60EXNexperia |
MOSFET N-CH 60V 42.9A LFPAK33 |
|
IPW50R399CPFKSA1Rochester Electronics |
MOSFET N-CH 560V 9A TO247-3 |
|
BUZ76Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
NVMFS5C677NLWFT1GRochester Electronics |
MOSFET N-CH 60V 11A/36A 5DFN |
|
SUM70030M-GE3Vishay / Siliconix |
MOSFET N-CH 100V 150A TO263-7 |
|
IRF1010EZPBFIR (Infineon Technologies) |
MOSFET N-CH 60V 75A TO220AB |