English
简体中文
MOSFET N-CH 600V 18A TO252-3
MOSFET N-CH 40V 15.5A PWRDI5060
SUBRACK FOR 19" 3U 84HP 295MM
RF ATTENUATOR 0DB-60DB SMA
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 15.5A (Ta), 100A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 6.5mOhm @ 20A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 29.1 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1895 pF @ 30 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.7W (Ta), 150W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerDI5060-8 |
| 包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDA59N25Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 250V 59A TO3PN |
|
SI7374DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 24A PPAK SO-8 |
|
IRF640NPBFIR (Infineon Technologies) |
MOSFET N-CH 200V 18A TO220AB |
|
SIHP6N65E-GE3Vishay / Siliconix |
MOSFET N-CH 650V 7A TO220AB |
|
DMS3016SFG-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 7A POWERDI3333-8 |
|
IXTA8N65X2Wickmann / Littelfuse |
MOSFET N-CH 650V 8A TO263 |
|
DMP6023LFGQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 60V 7.7A PWRDI3333-8 |
|
IPB034N03LGATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 80A D2PAK |
|
SIR836DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 21A PPAK SO-8 |
|
FDS8878Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 10.2A 8SOIC |
|
CSD17579Q5ATexas Instruments |
MOSFET N-CH 30V 25A 8VSON |
|
BUK7M5R0-40HXNexperia |
MOSFET N-CH 40V 85A LFPAK33 |
|
SQS484EN-T1_BE3Vishay / Siliconix |
MOSFET N-CH 40V 16A 1212-8 |