类型 | 描述 |
---|---|
系列: | NexFET™ |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 8 V |
电流 - 连续漏极 (id) @ 25°c: | 3A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 1.8V, 4.5V |
rds on (max) @ id, vgs: | 19.4mOhm @ 1.5A, 4.5V |
vgs(th) (最大值) @ id: | 1.1V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 6.3 nC @ 4.5 V |
vgs (最大值): | -6V |
输入电容 (ciss) (max) @ vds: | 914 pF @ 4 V |
场效应管特征: | - |
功耗(最大值): | 750mW (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 6-DSBGA |
包/箱: | 6-UFBGA, DSBGA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IPD135N03LGBTMA1IR (Infineon Technologies) |
LV POWER MOS |
|
IPI50N10S3L16AKSA1Rochester Electronics |
MOSFET N-CH 100V 50A TO262-3 |
|
SI7892BDP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 15A PPAK SO-8 |
|
IPA60R600P7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 6A TO220 |
|
SPP80P06PHXKSA1IR (Infineon Technologies) |
MOSFET P-CH 60V 80A TO220-3 |
|
SPA06N60C3XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 6.2A TO220-FP |
|
IXTP18P10TWickmann / Littelfuse |
MOSFET P-CH 100V 18A TO220AB |
|
TPH1R306PL,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 100A 8SOP |
|
HUF76645P3Rochester Electronics |
MOSFET N-CH 100V 75A TO220-3 |
|
SI2301A-TPMicro Commercial Components (MCC) |
MOSFET P-CH 20V 2.8A SOT23 |
|
IXFX80N50Q3Wickmann / Littelfuse |
MOSFET N-CH 500V 80A PLUS247-3 |
|
RQ3E100GNTBROHM Semiconductor |
MOSFET N-CH 30V 10A 8HSMT |
|
SQJA36EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 40V 350A PPAK SO-8 |