English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HiPerFET™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 500 V |
| 电流 - 连续漏极 (id) @ 25°c: | 80A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 65mOhm @ 40A, 10V |
| vgs(th) (最大值) @ id: | 6.5V @ 8mA |
| 栅极电荷 (qg) (max) @ vgs: | 200 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 10000 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1250W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | PLUS247™-3 |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
RQ3E100GNTBROHM Semiconductor |
MOSFET N-CH 30V 10A 8HSMT |
|
SQJA36EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 40V 350A PPAK SO-8 |
|
BSP296NH6433XTMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 1.2A SOT223-4 |
|
NTD23N03R-1GRochester Electronics |
MOSFET N-CH 25V 3.8A/17.1A IPAK |
|
IPB60R385CPRochester Electronics |
N-CHANNEL POWER MOSFET |
|
STL11N65M2STMicroelectronics |
MOSFET N-CH 650V POWERFLAT 5X5 H |
|
AOWF11S60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 11A TO262F |
|
PSMN3R0-30YLDXNexperia |
MOSFET N-CH 30V 100A LFPAK56 |
|
R6015KNXROHM Semiconductor |
MOSFET N-CH 600V 15A TO220FM |
|
RD3H080SPFRATLROHM Semiconductor |
MOSFET P-CH 45V 8A TO252 |
|
IPA60R120C7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 11A TO220 |
|
RQ1A060ZPTRROHM Semiconductor |
MOSFET P-CH 12V 6A TSMT8 |
|
STD1057T4Rochester Electronics |
NFET DPAK SPCL 60V TR |
