English
简体中文
TRIMMER 10K OHM 0.25W GW SIDE
BATTERY LITH 3V 5MAH COIN 6.8MM
MOSFET N-CH 30V 100A LFPAK56
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 100A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 3.1mOhm @ 25A, 10V |
| vgs(th) (最大值) @ id: | 2.2V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 46.4 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2939 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 91W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | LFPAK56, Power-SO8 |
| 包/箱: | SC-100, SOT-669 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
R6015KNXROHM Semiconductor |
MOSFET N-CH 600V 15A TO220FM |
|
RD3H080SPFRATLROHM Semiconductor |
MOSFET P-CH 45V 8A TO252 |
|
IPA60R120C7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 11A TO220 |
|
RQ1A060ZPTRROHM Semiconductor |
MOSFET P-CH 12V 6A TSMT8 |
|
STD1057T4Rochester Electronics |
NFET DPAK SPCL 60V TR |
|
IPB50N12S3L15ATMA1Rochester Electronics |
IPB50N12 - 120V-300V N-CHANNEL A |
|
IRFP064PBFVishay / Siliconix |
MOSFET N-CH 60V 70A TO247-3 |
|
ATP114-TL-HSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 55A ATPAK |
|
2N6755Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPA65R110CFDXKSA2IR (Infineon Technologies) |
MOSFET N-CH 650V 31.2A TO220 |
|
R8002ANXROHM Semiconductor |
MOSFET N-CH 800V 2A TO220FM |
|
PSMN8R2-80YS,115Nexperia |
MOSFET N-CH 80V 82A LFPAK56 |
|
NTB25P06T4GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 27.5A D2PAK |