English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 70A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 9mOhm @ 78A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 190 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 7400 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 300W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-247-3 |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
ATP114-TL-HSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 55A ATPAK |
|
2N6755Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPA65R110CFDXKSA2IR (Infineon Technologies) |
MOSFET N-CH 650V 31.2A TO220 |
|
R8002ANXROHM Semiconductor |
MOSFET N-CH 800V 2A TO220FM |
|
PSMN8R2-80YS,115Nexperia |
MOSFET N-CH 80V 82A LFPAK56 |
|
NTB25P06T4GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 27.5A D2PAK |
|
SI8802DB-T2-E1Vishay / Siliconix |
MOSFET N-CH 8V 4MICROFOOT |
|
IPL60R125C7AUMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 17A 4VSON |
|
NTMSD3P303R2Rochester Electronics |
MOSFET P-CH 30V 2.34A 8SOIC |
|
RSS065N06FRATBROHM Semiconductor |
MOSFET N-CH 60V 6.5A 8SOP |
|
NTMSD2P102LR2GRochester Electronics |
MOSFET P-CH 20V 2.3A 8SOIC |
|
TPIC5302DRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRF3205LPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 110A TO262 |
