







MOSFET N-CH 8V 4MICROFOOT
MOSFET P-CH 60V PWRDI3333
NETWORK SWITCH-UNMANAGED 5 PORT
COMP O= .094,L= .81,W= .010
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 8 V |
| 电流 - 连续漏极 (id) @ 25°c: | 3A (Ta) |
| 驱动电压(最大 rds on,最小 rds on): | 1.2V, 4.5V |
| rds on (max) @ id, vgs: | 54mOhm @ 1A, 4.5V |
| vgs(th) (最大值) @ id: | 700mV @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 6.5 nC @ 4.5 V |
| vgs (最大值): | ±5V |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗(最大值): | 500mW (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 4-Microfoot |
| 包/箱: | 4-XFBGA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
IPL60R125C7AUMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 17A 4VSON |
|
|
NTMSD3P303R2Rochester Electronics |
MOSFET P-CH 30V 2.34A 8SOIC |
|
|
RSS065N06FRATBROHM Semiconductor |
MOSFET N-CH 60V 6.5A 8SOP |
|
|
NTMSD2P102LR2GRochester Electronics |
MOSFET P-CH 20V 2.3A 8SOIC |
|
|
TPIC5302DRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
IRF3205LPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 110A TO262 |
|
|
BUK952R8-60E,127Rochester Electronics |
MOSFET N-CH 60V 120A TO220AB |
|
|
TSM045NA03CR RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 30V 108A 8PDFN |
|
|
APT30M36JFLLRoving Networks / Microchip Technology |
MOSFET N-CH 300V 76A ISOTOP |
|
|
STW5NK100ZSTMicroelectronics |
MOSFET N-CH 1000V 3.5A TO247-3 |
|
|
SI7421DN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 6.4A PPAK 1212-8 |
|
|
IAUC100N04S6L014ATMA1IR (Infineon Technologies) |
IAUC100N04S6L014ATMA1 |
|
|
IRF840BPBFVishay / Siliconix |
MOSFET N-CH 500V 8.7A TO220AB |