English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tube |
| 零件状态: | Not For New Designs |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 55 V |
| 电流 - 连续漏极 (id) @ 25°c: | 110A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 8mOhm @ 62A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 146 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 3247 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 200W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-262 |
| 包/箱: | TO-262-3 Long Leads, I²Pak, TO-262AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BUK952R8-60E,127Rochester Electronics |
MOSFET N-CH 60V 120A TO220AB |
|
TSM045NA03CR RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 30V 108A 8PDFN |
|
APT30M36JFLLRoving Networks / Microchip Technology |
MOSFET N-CH 300V 76A ISOTOP |
|
STW5NK100ZSTMicroelectronics |
MOSFET N-CH 1000V 3.5A TO247-3 |
|
SI7421DN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 6.4A PPAK 1212-8 |
|
IAUC100N04S6L014ATMA1IR (Infineon Technologies) |
IAUC100N04S6L014ATMA1 |
|
IRF840BPBFVishay / Siliconix |
MOSFET N-CH 500V 8.7A TO220AB |
|
IPD075N03LGATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 50A TO252-3 |
|
MCH3478-S-TL-HRochester Electronics |
MOSFET N-CH 1.8V 3MCPH |
|
TSM038N04LCP ROGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 40V 135A TO252 |
|
BSZ165N04NSGATMA1Rochester Electronics |
MOSFET N-CH 40V 8.9A/31A TSDSON |
|
STP270N8F7STMicroelectronics |
MOSFET N CH 80V 180A TO220 |
|
IRF245Rochester Electronics |
MOSFET N-CH 250V 13A TO204AE |
