English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 8A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.8V, 4.5V |
| rds on (max) @ id, vgs: | 30mOhm @ 5.1A, 4.5V |
| vgs(th) (最大值) @ id: | 1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 14 nC @ 4.5 V |
| vgs (最大值): | ±8V |
| 输入电容 (ciss) (max) @ vds: | 1060 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.6W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 6-TSOP |
| 包/箱: | SOT-23-6 Thin, TSOT-23-6 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AOTF16N50Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 500V 16A TO220-3F |
|
IPL65R165CFDAUMA1Rochester Electronics |
MOSFET N-CH 650V 21.3A 4VSON |
|
SIHH26N60E-T1-GE3Vishay / Siliconix |
MOSFET N-CH 600V 25A PPAK 8 X 8 |
|
PSMN045-80YS,115Nexperia |
MOSFET N-CH 80V 24A LFPAK56 |
|
IRFB4227PBFIR (Infineon Technologies) |
MOSFET N-CH 200V 65A TO220AB |
|
AON7414Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 12.5A/20A 8DFN |
|
DMP2160UWQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 1.5A SOT323 T&R |
|
IPD65R380E6ATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 10.6A TO252-3 |
|
RQ3C150BCTBROHM Semiconductor |
MOSFET P-CHANNEL 20V 30A 8HSMT |
|
IRFPC50LCPBFVishay / Siliconix |
MOSFET N-CH 600V 11A TO247-3 |
|
AOW125A60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 28A TO262 |
|
ZXMN3B14FTAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 2.9A SOT23-3 |
|
FCP11N60FSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 11A TO220-3 |
