English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | CoolMOS™ E6 |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Not For New Designs |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 650 V |
| 电流 - 连续漏极 (id) @ 25°c: | 10.6A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 380mOhm @ 3.2A, 10V |
| vgs(th) (最大值) @ id: | 3.5V @ 320µA |
| 栅极电荷 (qg) (max) @ vgs: | 39 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 710 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 83W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PG-TO252-3 |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
RQ3C150BCTBROHM Semiconductor |
MOSFET P-CHANNEL 20V 30A 8HSMT |
|
IRFPC50LCPBFVishay / Siliconix |
MOSFET N-CH 600V 11A TO247-3 |
|
AOW125A60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 28A TO262 |
|
ZXMN3B14FTAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 2.9A SOT23-3 |
|
FCP11N60FSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 11A TO220-3 |
|
STU13N60M2STMicroelectronics |
MOSFET N-CH 600V 11A IPAK |
|
STB85NF55LT4STMicroelectronics |
MOSFET N-CH 55V 80A D2PAK |
|
TK190A65Z,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 15A TO220SIS |
|
SPA06N80C3XKSA1IR (Infineon Technologies) |
MOSFET N-CH 800V 6A TO220-FP |
|
HUF75307D3Rochester Electronics |
MOSFET N-CH 55V 15A IPAK |
|
AOB380A60CLAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 11A TO263 |
|
IRF1404STRRPBFRochester Electronics |
HEXFET POWER MOSFET |
|
SI7636DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 17A PPAK SO-8 |
