类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 20 V |
电流 - 连续漏极 (id) @ 25°c: | 30A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V |
rds on (max) @ id, vgs: | 6.7mOhm @ 15A, 4.5V |
vgs(th) (最大值) @ id: | 1.2V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 60 nC @ 4.5 V |
vgs (最大值): | ±8V |
输入电容 (ciss) (max) @ vds: | 4800 pF @ 10 V |
场效应管特征: | - |
功耗(最大值): | 20W (Tc) |
工作温度: | 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 8-HSMT (3.2x3) |
包/箱: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRFPC50LCPBFVishay / Siliconix |
MOSFET N-CH 600V 11A TO247-3 |
|
AOW125A60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 28A TO262 |
|
ZXMN3B14FTAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 2.9A SOT23-3 |
|
FCP11N60FSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 11A TO220-3 |
|
STU13N60M2STMicroelectronics |
MOSFET N-CH 600V 11A IPAK |
|
STB85NF55LT4STMicroelectronics |
MOSFET N-CH 55V 80A D2PAK |
|
TK190A65Z,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 15A TO220SIS |
|
SPA06N80C3XKSA1IR (Infineon Technologies) |
MOSFET N-CH 800V 6A TO220-FP |
|
HUF75307D3Rochester Electronics |
MOSFET N-CH 55V 15A IPAK |
|
AOB380A60CLAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 11A TO263 |
|
IRF1404STRRPBFRochester Electronics |
HEXFET POWER MOSFET |
|
SI7636DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 17A PPAK SO-8 |
|
AUIRFR6215TRLIR (Infineon Technologies) |
MOSFET P-CH 150V 13A DPAK |