类型 | 描述 |
---|---|
系列: | OptiMOS™ |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 80 V |
电流 - 连续漏极 (id) @ 25°c: | 18A (Ta), 100A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 6V, 10V |
rds on (max) @ id, vgs: | 4.7mOhm @ 50A, 10V |
vgs(th) (最大值) @ id: | 3.5V @ 90µA |
栅极电荷 (qg) (max) @ vgs: | 69 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 4800 pF @ 40 V |
场效应管特征: | - |
功耗(最大值): | 2.5W (Ta), 125W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PG-TDSON-8-1 |
包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CSD19535KTTTTexas Instruments |
MOSFET N-CH 100V 200A DDPAK |
|
NP80N04NDG-S18-AYRochester Electronics |
MOSFET N-CH 40V 80A TO262 |
|
NTB18N06T4Rochester Electronics |
MOSFET N-CH 60V 15A D2PAK |
|
SQJ443EP-T1_GE3Vishay / Siliconix |
MOSFET P-CH 40V 40A PPAK SO-8 |
|
RTM002P02T2LROHM Semiconductor |
MOSFET P-CH 20V 200MA VMT3 |
|
SI5418DU-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 12A PPAK |
|
ZVN3310FTAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 100MA SOT23-3 |
|
IRFZ34PBFVishay / Siliconix |
MOSFET N-CH 60V 30A TO220AB |
|
NTA4015NT1GRochester Electronics |
MOSFET N-CH 20V 238MA SC75 |
|
FDWS9510L-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 40V 50A 8DFN |
|
TPH3208LDGTransphorm |
GANFET N-CH 650V 20A 3PQFN |
|
BUK7516-55A,127Rochester Electronics |
PFET, 65.7A I(D), 55V, 0.016OHM, |
|
DMN53D0LW-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 50V 360MA SOT323 |