English
简体中文
LCD MODULE 40 DIG 20 X 2 PASSIVE
TVS DIODE 48V 77.4V DO215AB
MOSFET N-CH 100V 200A DDPAK
PRESS XDCR M3254-000002-016BG
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | NexFET™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 200A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 6V, 10V |
| rds on (max) @ id, vgs: | 3.4mOhm @ 100A, 10V |
| vgs(th) (最大值) @ id: | 3.4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 98 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 7930 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 300W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | DDPAK/TO-263-3 |
| 包/箱: | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NP80N04NDG-S18-AYRochester Electronics |
MOSFET N-CH 40V 80A TO262 |
|
NTB18N06T4Rochester Electronics |
MOSFET N-CH 60V 15A D2PAK |
|
SQJ443EP-T1_GE3Vishay / Siliconix |
MOSFET P-CH 40V 40A PPAK SO-8 |
|
RTM002P02T2LROHM Semiconductor |
MOSFET P-CH 20V 200MA VMT3 |
|
SI5418DU-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 12A PPAK |
|
ZVN3310FTAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 100MA SOT23-3 |
|
IRFZ34PBFVishay / Siliconix |
MOSFET N-CH 60V 30A TO220AB |
|
NTA4015NT1GRochester Electronics |
MOSFET N-CH 20V 238MA SC75 |
|
FDWS9510L-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 40V 50A 8DFN |
|
TPH3208LDGTransphorm |
GANFET N-CH 650V 20A 3PQFN |
|
BUK7516-55A,127Rochester Electronics |
PFET, 65.7A I(D), 55V, 0.016OHM, |
|
DMN53D0LW-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 50V 360MA SOT323 |
|
FDB2552-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N CH 150V 5A TO-263AB |