English
简体中文
MOSFET P-CH 40V 40A PPAK SO-8
MINI-COM MODULE, CAT 5E, UTP, 8
OPTOISO 2.5KV 2CH OPEN COLL 8DIP
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101, TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 40A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 29mOhm @ 18A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 57 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2030 pF @ 20 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 83W (Tc) |
| 工作温度: | -55°C ~ 175°C (TA) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerPAK® SO-8 |
| 包/箱: | PowerPAK® SO-8 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
RTM002P02T2LROHM Semiconductor |
MOSFET P-CH 20V 200MA VMT3 |
|
SI5418DU-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 12A PPAK |
|
ZVN3310FTAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 100MA SOT23-3 |
|
IRFZ34PBFVishay / Siliconix |
MOSFET N-CH 60V 30A TO220AB |
|
NTA4015NT1GRochester Electronics |
MOSFET N-CH 20V 238MA SC75 |
|
FDWS9510L-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 40V 50A 8DFN |
|
TPH3208LDGTransphorm |
GANFET N-CH 650V 20A 3PQFN |
|
BUK7516-55A,127Rochester Electronics |
PFET, 65.7A I(D), 55V, 0.016OHM, |
|
DMN53D0LW-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 50V 360MA SOT323 |
|
FDB2552-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N CH 150V 5A TO-263AB |
|
SIR626ADP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 60V 40.4A/165A PPAK |
|
DMN24H11DS-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 240V 270MA SOT23 T&R |
|
RQ3E100MNTB1ROHM Semiconductor |
MOSFET N-CH 30V 10A HSMT8 |