HEATSINK 35X35X10MM L-TAB T412
MOSFET P-CH 20V 2A SUPERSOT3
THY DL NEG 160MA 500A ESD MSO13
类型 | 描述 |
---|---|
系列: | PowerTrench® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 20 V |
电流 - 连续漏极 (id) @ 25°c: | 2A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 2.5V, 4.5V |
rds on (max) @ id, vgs: | 70mOhm @ 2A, 4.5V |
vgs(th) (最大值) @ id: | 1.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 10 nC @ 4.5 V |
vgs (最大值): | ±8V |
输入电容 (ciss) (max) @ vds: | 779 pF @ 10 V |
场效应管特征: | - |
功耗(最大值): | 500mW (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | SuperSOT-3 |
包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NTMFS08N003CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 22A/147A POWER56 |
|
BSZ042N04NSGATMA1Rochester Electronics |
MOSFET N-CH 40V 40A TSDSON-8 |
|
SIB452DK-T1-GE3Vishay / Siliconix |
MOSFET N-CH 190V 1.5A PPAK SC75 |
|
IPP80R1K4P7Rochester Electronics |
IPP80R1K4 - 800V COOLMOS N-CHANN |
|
AUIRFR3504ZTRLRochester Electronics |
MOSFET N-CH 40V 42A DPAK |
|
RQ6A050ZPTRROHM Semiconductor |
MOSFET P-CH 12V 5A TSMT6 |
|
STF9N80K5STMicroelectronics |
MOSFET N-CH 800V 7A TO220FP |
|
SI4455DY-T1-E3Vishay / Siliconix |
MOSFET P-CH 150V 2.8A 8SO |
|
TSM150P04LCS RLGTSC (Taiwan Semiconductor) |
MOSFET P-CHANNEL 40V 22A 8SOP |
|
3LP01M-TL-ERochester Electronics |
MOSFET P-CH 30V 100MA 3MCP |
|
BSC123N10LSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 10.6/71A 8TDSON |
|
STB20N95K5STMicroelectronics |
MOSFET N-CH 950V 17.5A D2PAK |
|
RQ3L090GNTBROHM Semiconductor |
MOSFET N-CH 60V 9A/30A 8HSMT |