类型 | 描述 |
---|---|
系列: | AlphaSGT™ |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 100 V |
电流 - 连续漏极 (id) @ 25°c: | 15A (Ta), 47A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 10.8mOhm @ 20A, 10V |
vgs(th) (最大值) @ id: | 2.6V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 35 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1725 pF @ 50 V |
场效应管特征: | - |
功耗(最大值): | 5W (Ta), 48W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 8-DFN-EP (5x6) |
包/箱: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FDFMA2P853Rochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
FQB33N10TMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 33A D2PAK |
|
2SK1464Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
BSN20BKRNexperia |
MOSFET N-CH 60V 265MA TO236AB |
|
BSH111,215Rochester Electronics |
MOSFET N-CH 55V 335MA TO236AB |
|
2SK160A-T1B-ARochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
STD60NF06T4STMicroelectronics |
MOSFET N-CH 60V 60A DPAK |
|
IRLZ44ZSPBFRochester Electronics |
MOSFET N-CH 55V 51A TO263-3-2 |
|
UF3C120150K4SUnitedSiC |
SICFET N-CH 1200V 18.4A TO247-4 |
|
IXFX140N30PWickmann / Littelfuse |
MOSFET N-CH 300V 140A PLUS247-3 |
|
IRFS4127TRLPBFIR (Infineon Technologies) |
MOSFET N-CH 200V 72A D2PAK |
|
SI4401BDY-T1-E3Vishay / Siliconix |
MOSFET P-CH 40V 8.7A 8SO |
|
IPB26CN10NGATMA1Rochester Electronics |
MOSFET N-CH 100V 35A D2PAK |