English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | OptiMOS™ |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 35A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 26mOhm @ 35A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 39µA |
| 栅极电荷 (qg) (max) @ vgs: | 31 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2.07 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 71W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D²PAK (TO-263AB) |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPS80R1K2P7AKMA1Rochester Electronics |
MOSFET N-CH 800V 4.5A TO251-3 |
|
BSC118N10NSGRochester Electronics |
BSC118N10 - 12V-300V N-CHANNEL P |
|
BSP89,115Nexperia |
MOSFET N-CH 240V 375MA SOT223 |
|
NVMFS5C423NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 126A 5DFN |
|
SQJA70EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 100V 14.7A PPAK SO-8 |
|
NVD5862NT4GRochester Electronics |
18A, 60V, 0.0057OHM, N-CHANNEL, |
|
AUIRFS4410ZRochester Electronics |
AUTOMOTIVE HEXFET N CHANNEL |
|
BSS205NH6327XTSA1IR (Infineon Technologies) |
MOSFET N-CH 20V 2.5A SOT23-3 |
|
TPH3207WSTransphorm |
GANFET N-CH 650V 50A TO247-3 |
|
NTHD4N02FT1Rochester Electronics |
MOSFET N-CH 20V 2.9A CHIPFET |
|
FQPF5N60CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 4.5A TO220F |
|
RSJ650N10TLROHM Semiconductor |
MOSFET N-CH 100V 65A LPTS |
|
IXFH230N075T2Wickmann / Littelfuse |
MOSFET N-CH 75V 230A TO247AD |
