English
简体中文
FA2 APPLICATOR - MECHANICAL FEED
MOSFET N-CH 100V 13A DPAK
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | STripFET™ II |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 13A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 130mOhm @ 5A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 21 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 460 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 50W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | DPAK |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FQU3P20TURochester Electronics |
MOSFET P-CH 200V 2.4A IPAK |
|
RM15N650T2Rectron USA |
MOSFET N-CH 650V 15A TO220-3 |
|
BUK9M6R0-40HXNexperia |
MOSFET N-CH 40V 50A LFPAK33 |
|
AUIRF1405ZS-7TRLRochester Electronics |
MOSFET N-CH 55V 120A D2PAK |
|
SQ2301ES-T1_GE3Vishay / Siliconix |
MOSFET P-CH 20V 3.9A TO236 |
|
TPH8R80ANH,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 100V 32A 8-SOP |
|
FQAF12P20Rochester Electronics |
MOSFET P-CH 200V 8.6A TO3PF |
|
IRFB4321PBFIR (Infineon Technologies) |
MOSFET N-CH 150V 85A TO220AB |
|
SIR124DP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 80V 16.1A/56.8A PPAK |
|
IPA60R280C6XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 13.8A TO220-FP |
|
SI4348DY-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 8A 8SO |
|
SIA485DJ-T1-GE3Vishay / Siliconix |
MOSFET P-CH 150V 1.6A PPAK SC70 |
|
BUZ30AHRochester Electronics |
MOSFET N-CH 200V 21A TO220-3 |