CAP FILM 0.1UF 5% 1KVDC RADIAL
MOSFET P-CH 30V 4A SOT23F
类型 | 描述 |
---|---|
系列: | U-MOSVI |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 4A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 4V, 10V |
rds on (max) @ id, vgs: | 71mOhm @ 3A, 10V |
vgs(th) (最大值) @ id: | 2V @ 100µA |
栅极电荷 (qg) (max) @ vgs: | 5.9 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 280 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 1W (Ta) |
工作温度: | 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | SOT-23F |
包/箱: | SOT-23-3 Flat Leads |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FQU1N60CTUSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 1A IPAK |
|
IXTP32P05TWickmann / Littelfuse |
MOSFET P-CH 50V 32A TO220AB |
|
IXFT58N20Wickmann / Littelfuse |
MOSFET N-CH 200V 58A TO268 |
|
IPB100N06S3-04Rochester Electronics |
MOSFET N-CH 55V 100A TO263-3 |
|
AON7380Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 24A 8DFN |
|
TQM070NB04CR RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 40V 15A/75A 8PDFNU |
|
STL4P2UH7STMicroelectronics |
MOSFET P-CH 20V 4A POWERFLAT |
|
IPL65R195C7AUMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 12A 4VSON |
|
STI55NF03LSTMicroelectronics |
MOSFET N-CH 30V 55A I2PAK |
|
MTD5N25ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
STD10PF06-1STMicroelectronics |
MOSFET P-CH 60V 10A IPAK |
|
AUIRFB4410-IRRochester Electronics |
AUTOMOTIVE HEXFET N CHANNEL |
|
SQD100N02-3M5L_GE3Vishay / Siliconix |
MOSFET N-CH 20V 100A TO252AA |