类型 | 描述 |
---|---|
系列: | OptiMOS™ |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Not For New Designs |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 40 V |
电流 - 连续漏极 (id) @ 25°c: | 50A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 10.6mOhm @ 50A, 10V |
vgs(th) (最大值) @ id: | 2.2V @ 85µA |
栅极电荷 (qg) (max) @ vgs: | 59 nC @ 10 V |
vgs (最大值): | ±16V |
输入电容 (ciss) (max) @ vds: | 3900 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 58W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PG-TO252-3-313 |
包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IXTP44N10TWickmann / Littelfuse |
MOSFET N-CH 100V 44A TO220AB |
|
IRFB3607PBFIR (Infineon Technologies) |
MOSFET N-CH 75V 80A TO220AB |
|
EPC2015CEPC |
GANFET N-CH 40V 53A DIE |
|
SIHB6N80E-GE3Vishay / Siliconix |
MOSFET N-CH 800V 5.4A D2PAK |
|
SIHA2N80E-GE3Vishay / Siliconix |
MOSFET N-CH 800V 2.8A TO220 |
|
FDS5680Rochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
SI4401DDY-T1-GE3Vishay / Siliconix |
MOSFET P-CH 40V 16.1A 8SO |
|
IPD15N06S2L64ATMA2IR (Infineon Technologies) |
MOSFET N-CH 55V 19A TO252-31 |
|
SI6466DQRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRF7465TRPBFIR (Infineon Technologies) |
MOSFET N-CH 150V 1.9A 8SO |
|
SUD40N08-16-E3Vishay / Siliconix |
MOSFET N-CH 80V 40A TO252 |
|
STD6N65M2STMicroelectronics |
MOSFET N-CH 650V 4A DPAK |
|
SSP1N50BRochester Electronics |
N-CHANNEL POWER MOSFET |