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| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPS65R1K4C6AKMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 3.2A TO251-3 |
|
FDS6675BZSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 11A 8SOIC |
|
IPP60R600P6XKSA1Rochester Electronics |
MOSFET N-CH 600V 7.3A TO220-3 |
|
FCD850N80ZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 6A DPAK |
|
SQ3457EV-T1_GE3Vishay / Siliconix |
MOSFET P-CHANNEL 30V 6.8A 6TSOP |
|
FQAF5N90Rochester Electronics |
MOSFET N-CH 900V 4.1A TO3PF |
|
STW15N80K5STMicroelectronics |
MOSFET N-CH 800V 14A TO247 |
|
FDD14AN06LA0-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 9.5A/50A TO252AA |
|
DMP2070UCB6-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 2.5A U-WLB1510-6 |
|
DMTH43M8LK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CHANNEL 40V 100A TO252 |
|
SIE808DF-T1-E3Vishay / Siliconix |
MOSFET N-CH 20V 60A 10POLARPAK |
|
AOTF2916LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 5A/17A TO220-3F |
|
NX3008PBKVLNexperia |
MOSFET P-CH 30V 230MA TO236AB |
