MOSFET N-CH 600V 10.6A TO220-FP
SMA-SP/HDBNC-SJB G174 3I
类型 | 描述 |
---|---|
系列: | CoolMOS™ P6 |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 600 V |
电流 - 连续漏极 (id) @ 25°c: | 10.6A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 380mOhm @ 3.8A, 10V |
vgs(th) (最大值) @ id: | 4.5V @ 320µA |
栅极电荷 (qg) (max) @ vgs: | 19 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 877 pF @ 100 V |
场效应管特征: | - |
功耗(最大值): | 31W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | PG-TO220-FP |
包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRFS7530TRL7PPIR (Infineon Technologies) |
MOSFET N CH 60V 240A D2PAK |
|
FDMC86320Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 10.7A/22A 8MLP |
|
FDMS7670ASSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 22A/42A 8PQFN |
|
IXFA8N65X2Wickmann / Littelfuse |
MOSFET N-CH 650V 8A TO263 |
|
BSC084P03NS3EGATMA1IR (Infineon Technologies) |
MOSFET P-CH 30V 14.9A 8TDSON |
|
NVMFS5C612NLT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 36A/235A 5DFN |
|
NTMFS5C423NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 5DFN |
|
HUF75321D3SRochester Electronics |
MOSFET N-CH 55V 20A TO252AA |
|
IXTH130N15X4Wickmann / Littelfuse |
MOSFET N-CH 150V 130A TO247 |
|
FQAF16N50Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 11.3A TO3PF |
|
DMP3018SSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 10.5/25A 8SO T&R |
|
SI8812DB-T2-E1Vishay / Siliconix |
MOSFET N-CH 20V 4MICROFOOT |
|
TSM230N06PQ56 RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 60V 44A 8PDFN |