类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 1500 V |
电流 - 连续漏极 (id) @ 25°c: | 4A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 6Ohm @ 2A, 10V |
vgs(th) (最大值) @ id: | 5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 44.5 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 1576 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 280W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-247 (IXTH) |
包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AOWF8N50Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 500V 8A TO262F |
|
SPP17N80C3XKSA1IR (Infineon Technologies) |
MOSFET N-CH 800V 17A TO220-3 |
|
SSM3J36FS,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 330MA SSM |
|
IPW65R310CFDFKSA1Rochester Electronics |
MOSFET N-CH 650V 11.4A TO247-3 |
|
RM2333ARectron USA |
MOSFET P-CHANNEL 12V 6A SOT23 |
|
AOK40N30LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 300V 40A TO247 |
|
NVMFS5C460NWFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 19A/71A 5DFN |
|
TQM110NB04CR RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 40V 12A/54A 8PDFNU |
|
IXFJ80N25X3Wickmann / Littelfuse |
MOSFET N-CH 250V 44A ISO TO247-3 |
|
ZVP4525GTAZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 250V 265MA SOT223 |
|
SI3429EDV-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 8A/8A 6TSOP |
|
TSM033NA03CR RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 30V 129A 8PDFN |
|
NDDL01N60Z-1GRochester Electronics |
MOSFET N-CH 600V 800MA IPAK |