类型 | 描述 |
---|---|
系列: | CoolMOS™ |
包裹: | Tube |
零件状态: | Not For New Designs |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 500 V |
电流 - 连续漏极 (id) @ 25°c: | 21A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 190mOhm @ 13.1A, 10V |
vgs(th) (最大值) @ id: | 3.9V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 95 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 2400 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 208W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | PG-TO220-3-1 |
包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NTP095N65S3HFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 36A TO220-3 |
|
SQJA62EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 60V 60A PPAK SO-8 |
|
UPA2700GR-E1-ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPW50R280CEFKSA1Rochester Electronics |
MOSFET N-CH 500V 13A TO247-3 |
|
IRFB18N50KPBFVishay / Siliconix |
MOSFET N-CH 500V 17A TO220AB |
|
STB80NF10T4STMicroelectronics |
MOSFET N-CH 100V 80A D2PAK |
|
BSC119N03MSCGRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SI2307BDS-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 2.5A SOT23-3 |
|
IPP028N08N3GHKSA1Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
2SK2463T100ROHM Semiconductor |
MOSFET N-CH 60V 2A MPT3 |
|
ZXMP4A16GQTCZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 40V SOT223 |
|
C3M0160120DWolfspeed - a Cree company |
SICFET N-CH 1200V 17A TO247-3 |
|
IPD25N06S240ATMA2Rochester Electronics |
MOSFET N-CH 55V 29A TO252-3-11 |