English
简体中文
MOSFET N-CH 20V 30A DPAK
BUS DRIVER
ON-DELAY MAX 6S 110VAC DPDT(2C)
BRD MNT PRESSURE SENSORS
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 30A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.8V, 4.5V |
| rds on (max) @ id, vgs: | 7mOhm @ 15A, 4.5V |
| vgs(th) (最大值) @ id: | 1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 29 nC @ 4.5 V |
| vgs (最大值): | ±10V |
| 输入电容 (ciss) (max) @ vds: | 1700 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 30W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | DPAK (TO-252) |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDS4672ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 11A 8SOIC |
|
IPP60R950C6XKSA1Rochester Electronics |
MOSFET N-CH 600V 4.4A TO220-3 |
|
IRFS7762TRLPBFRochester Electronics |
MOSFET N-CH 75V 85A D2PAK |
|
TK7P65W,RQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 6.8A DPAK |
|
FCPF7N60NTSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 6.8A TO220F |
|
RQ3E180AJTBROHM Semiconductor |
MOSFET N-CH 30V 18A/30A 8HSMT |
|
NP80N055PDG-E1B-AYRochester Electronics |
MOSFET N-CH 55V 80A TO263 |
|
SQS481ENW-T1_GE3Vishay / Siliconix |
MOSFET P-CH 150V 4.7A PPAK1212-8 |
|
IXTK150N15PWickmann / Littelfuse |
MOSFET N-CH 150V 150A TO264 |
|
IRFL4105PBFRochester Electronics |
MOSFET N-CH 55V 3.7A SOT223 |
|
SSM3K341TU,LXHFToshiba Electronic Devices and Storage Corporation |
AECQ MOSFET NCH 60V 6A SOT323F |
|
IRF510STRLPBFVishay / Siliconix |
MOSFET N-CH 100V 5.6A D2PAK |
|
BSC190N15NS3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 150V 50A TDSON-8-1 |