English
简体中文
RES 56K OHM 5% 3/4W 1206
RES SMD 20K OHM 1% 1/10W 0603
GANFET N-CH 650V 20A 4PQFN
MOSFET P-CH 20V 3.5A 8TSSOP
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | GaNFET (Gallium Nitride) |
| 漏源电压 (vdss): | 650 V |
| 电流 - 连续漏极 (id) @ 25°c: | 20A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 130mOhm @ 13A, 8V |
| vgs(th) (最大值) @ id: | 2.6V @ 300µA |
| 栅极电荷 (qg) (max) @ vgs: | 14 nC @ 8 V |
| vgs (最大值): | ±18V |
| 输入电容 (ciss) (max) @ vds: | 760 pF @ 400 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 96W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 4-PQFN (8x8) |
| 包/箱: | 4-PowerDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDP20N50FSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 20A TO220-3 |
|
IPD30N03S4L09ATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 30A TO252-3 |
|
NDS8426ARochester Electronics |
MOSFET N-CH 20V 10.5A 8SOIC |
|
BSO080P03NS3GRochester Electronics |
BSO080P03 - 20V-250V P-CHANNEL P |
|
IPD50N04S410ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 50A TO252-3-313 |
|
|
FDW6923Rochester Electronics |
MOSFET P-CH 20V 3.5A 8TSSOP |
|
TSM2N100CP ROGTSC (Taiwan Semiconductor) |
MOSFET N-CH 1000V 1.85A TO252 |
|
AOD4132Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 85A TO252 |
|
FDC3535Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 80V 2.1A SUPERSOT6 |
|
FDD9507L-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 40V 100A DPAK |
|
SPI07N60S5Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRLMS6702TRPBFIR (Infineon Technologies) |
MOSFET P-CH 20V 2.4A MICRO6 |
|
IRFS5615TRLPBFRochester Electronics |
IRFS5615 - DIGITAL AUDIO MOSFET |