类型 | 描述 |
---|---|
系列: | HEXFET® |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 40 V |
电流 - 连续漏极 (id) @ 25°c: | 26A (Ta), 50A (Tc) |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | 3.3mOhm @ 50A, 10V |
vgs(th) (最大值) @ id: | 2.5V @ 100µA |
栅极电荷 (qg) (max) @ vgs: | 58 nC @ 4.5 V |
vgs (最大值): | ±16V |
输入电容 (ciss) (max) @ vds: | 3720 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 3.6W (Ta), 104W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PG-TDSON-8-10 |
包/箱: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CSD18511KTTTexas Instruments |
MOSFET N-CH 40V 194A DDPAK |
|
IXFX32N90PWickmann / Littelfuse |
MOSFET N-CH 900V 32A PLUS247-3 |
|
TK380P60Y,RQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CHANNEL 600V 9.7A DPAK |
|
IRFP244Rochester Electronics |
MOSFET N-CH 250V 15A TO247-3 |
|
CPH6315-TL-ERochester Electronics |
P-CHANNEL POWER MOSFET |
|
IPB160N04S4H1ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 160A TO263-7 |
|
FDPF18N50Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 18A TO220F |
|
STB42N60M2-EPSTMicroelectronics |
MOSFET N-CH 600V 34A D2PAK |
|
NTMFS4C032NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 13A/38A 5DFN |
|
2SK209-BL(TE85L,F)Toshiba Electronic Devices and Storage Corporation |
TRANS SJT N-CH 10MA SC59 |
|
AOT20S60LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 20A TO220 |
|
FQPF30N06LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 22.5A TO220F |
|
AUIRFR3710ZTRLRochester Electronics |
AUTOMOTIVE HEXFET N CHANNEL |