English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 12A (Ta), 50A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 3.8V, 10V |
| rds on (max) @ id, vgs: | 11mOhm @ 14.4A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 12 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 823 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.3W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount, Wettable Flank |
| 供应商设备包: | PowerDI3333-8 (SWP) Type UX |
| 包/箱: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
RND030N20TLROHM Semiconductor |
MOSFET N-CH 200V 3A CPT3 |
|
IPI65R190CFDXKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 17.5A TO262-3 |
|
SISA66DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 40A PPAK1212-8 |
|
RF4E060AJTCRROHM Semiconductor |
MOSFET N-CH 30V 6A HUML2020L8 |
|
NP90N03VUG-E1-AYRochester Electronics |
MOSFET N-CH 30V 90A TO252 |
|
DMN3150L-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 28V 3.8A SOT23-3 |
|
SPB07N60C3Rochester Electronics |
SPB07N60 - 600V COOLMOS N-CHANNE |
|
SI1031X-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 155MA SC75A |
|
SQ4850EY-T1_BE3Vishay / Siliconix |
MOSFET N-CH 60V 12A 8SOIC |
|
NVMFS5C450NLWFT1GRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
SSM3K333R,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 30V 6A 2-3Z1A |
|
FDMS86255ET150Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 10A/63A POWER56 |
|
AOD240Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 40V 23A/70A TO252 |
