English
简体中文
RES 3.92 OHM 7W 1% WW AXIAL
MOSFET N-CH 600V 8.1A TO220-3
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | CoolMOS™ |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 8.1A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 520mOhm @ 2.8A, 10V |
| vgs(th) (最大值) @ id: | 3.5V @ 230µA |
| 栅极电荷 (qg) (max) @ vgs: | 23.4 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 512 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 66W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | PG-TO220-3 |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BTS282ZAKSA1Rochester Electronics |
MOSFET N-CH 49V 80A TO220-7 |
|
SI3458BDV-T1-BE3Vishay / Siliconix |
MOSFET N-CH 60V 3.2A/4.1A 6TSOP |
|
IRFI820GVishay / Siliconix |
MOSFET N-CH 500V 2.1A TO220-3 |
|
SPD06N80C3ATMA1IR (Infineon Technologies) |
MOSFET N-CH 800V 6A TO252-3 |
|
FQPF9P25YDTURochester Electronics |
MOSFET P-CH 250V 6A TO220F-3 |
|
CSD16322Q5CRochester Electronics |
MOSFET N-CH 25V 21A/97A 8VSON |
|
SI4410DYRochester Electronics |
MOSFET N-CH 30V 10A 8SOIC |
|
IPW65R190C6FKSA1Rochester Electronics |
MOSFET N-CH 650V 20.2A TO247-3 |
|
IRF630NSTRLPBFIR (Infineon Technologies) |
MOSFET N-CH 200V 9.3A D2PAK |
|
NVTR4503NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 1.5A SOT23-3 |
|
TPC8129,LQ(SToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 30V 9A 8SOP |
|
3LN01SS-TL-ERochester Electronics |
MOSFET N-CH 30V 150MA SC81 |
|
SIHP30N60AEL-GE3Vishay / Siliconix |
MOSFET N-CH 600V 28A TO220AB |