English
简体中文
TVS DIODE 6.4V 11.3V SMB
MOSFET N-CH 500V 5.5A TO220-3
MOTOR 82660 GEARBOX RC65 RATIO 1
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | QFET® |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 500 V |
| 电流 - 连续漏极 (id) @ 25°c: | 5.5A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 1.2Ohm @ 2.8A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 25 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 700 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 98W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220-3 |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
TSM048NB06LCR RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 60V 16A/107A 8PDFN |
|
FDS6675Rochester Electronics |
MOSFET P-CH 30V 11A 8SOIC |
|
IPD60R145CFD7ATMA1IR (Infineon Technologies) |
MOSFET N CH |
|
BSZ0702LSATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 17A/40A TSDSON |
|
SISS02DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 25V 51A/80A PPAK |
|
STD16NF25STMicroelectronics |
MOSFET N-CH 250V 14A DPAK |
|
BUK7535-100A,127Rochester Electronics |
MOSFET N-CH 100V 41A TO220AB |
|
R6509KNJTLROHM Semiconductor |
MOSFET N-CH 650V 9A LPTS |
|
IPD50P04P413ATMA2IR (Infineon Technologies) |
MOSFET P-CH 40V 50A TO252-3 |
|
NTTS2P02R2Rochester Electronics |
MOSFET P-CH 20V 2.4A MICRO8 |
|
IXFH86N30TWickmann / Littelfuse |
MOSFET N-CH 300V 86A TO247AD |
|
AOTF4N60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 4A TO220-3F |
|
FDD9509L-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 40V 90A DPAK |