类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 16A (Ta), 107A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 4.8mOhm @ 16A, 10V |
vgs(th) (最大值) @ id: | 2.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 105 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 6253 pF @ 30 V |
场效应管特征: | - |
功耗(最大值): | 3.1W (Ta), 136W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 8-PDFN (5x6) |
包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FDS6675Rochester Electronics |
MOSFET P-CH 30V 11A 8SOIC |
|
IPD60R145CFD7ATMA1IR (Infineon Technologies) |
MOSFET N CH |
|
BSZ0702LSATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 17A/40A TSDSON |
|
SISS02DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 25V 51A/80A PPAK |
|
STD16NF25STMicroelectronics |
MOSFET N-CH 250V 14A DPAK |
|
BUK7535-100A,127Rochester Electronics |
MOSFET N-CH 100V 41A TO220AB |
|
R6509KNJTLROHM Semiconductor |
MOSFET N-CH 650V 9A LPTS |
|
IPD50P04P413ATMA2IR (Infineon Technologies) |
MOSFET P-CH 40V 50A TO252-3 |
|
NTTS2P02R2Rochester Electronics |
MOSFET P-CH 20V 2.4A MICRO8 |
|
IXFH86N30TWickmann / Littelfuse |
MOSFET N-CH 300V 86A TO247AD |
|
AOTF4N60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 4A TO220-3F |
|
FDD9509L-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 40V 90A DPAK |
|
DMT12H090LFDF4-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 115V 3.4A 6DFN |