类型 | 描述 |
---|---|
系列: | OptiMOS®-P2 |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 40 V |
电流 - 连续漏极 (id) @ 25°c: | 50A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 12.6mOhm @ 50A, 10V |
vgs(th) (最大值) @ id: | 4V @ 85µA |
栅极电荷 (qg) (max) @ vgs: | 51 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 3670 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 58W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PG-TO252-3-313 |
包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NTTS2P02R2Rochester Electronics |
MOSFET P-CH 20V 2.4A MICRO8 |
|
IXFH86N30TWickmann / Littelfuse |
MOSFET N-CH 300V 86A TO247AD |
|
AOTF4N60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 4A TO220-3F |
|
FDD9509L-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 40V 90A DPAK |
|
DMT12H090LFDF4-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 115V 3.4A 6DFN |
|
IRF840ASTRRPBFVishay / Siliconix |
MOSFET N-CH 500V 8A D2PAK |
|
IPP030N10N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 100V 100A TO220-3 |
|
2N7002-HFComchip Technology |
MOSFET N-CH 60V 250MA SOT23 |
|
BSP318SH6327XTSA1IR (Infineon Technologies) |
MOSFET N-CH 60V 2.6A SOT223-4 |
|
ISL9N303AS3Rochester Electronics |
MOSFET N-CH 30V 75A I2PAK |
|
RD3U080CNTL1ROHM Semiconductor |
MOSFET N-CH 250V 8A TO252 |
|
RQ6E035ATTCRROHM Semiconductor |
MOSFET P-CH 30V 3.5A TSMT6 |
|
IPB90N06S404ATMA2Rochester Electronics |
MOSFET N-CH 60V 90A D2PAK |