类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 18.5A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 7mOhm @ 17A, 10V |
vgs(th) (最大值) @ id: | 2.8V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 64.2 nC @ 10 V |
vgs (最大值): | ±25V |
输入电容 (ciss) (max) @ vds: | 2826 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 1.5W (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | TO-252, (D-Pak) |
包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IPZ40N04S53R1ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 40A 8TSDSON |
|
PSMN5R0-80BS,118Nexperia |
MOSFET N-CH 80V 100A D2PAK |
|
NDS352APRochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
NVD6415ANT4GRochester Electronics |
23A, 100V, 0.055OHM, N-CHANNEL, |
|
SIR618DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 200V 14.2A PPAK SO-8 |
|
CSD17581Q5ATexas Instruments |
MOSFET N-CH 30V 24A/123A 8VSON |
|
DMG4710SSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 8.8A 8SOP |
|
STK22N6F3STMicroelectronics |
MOSFET N-CH 60V 22A POLARPAK |
|
AOB7S60LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 7A TO263 |
|
STO33N60M6STMicroelectronics |
MOSFET N-CH 600V 25A TOLL |
|
RSH070P05TB1ROHM Semiconductor |
MOSFET P-CH 45V 7A 8SOP |
|
IRFR110PBFVishay / Siliconix |
MOSFET N-CH 100V 4.3A DPAK |
|
IRFM210BTFRochester Electronics |
N-CHANNEL POWER MOSFET |