类型 | 描述 |
---|---|
系列: | MDmesh™ DK5 |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 950 V |
电流 - 连续漏极 (id) @ 25°c: | 18A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 330mOhm @ 9A, 10V |
vgs(th) (最大值) @ id: | 5V @ 100µA |
栅极电荷 (qg) (max) @ vgs: | 50.7 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 1600 pF @ 100 V |
场效应管特征: | - |
功耗(最大值): | 250W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-247 Long Leads |
包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IPI100N06S3L-03Rochester Electronics |
MOSFET N-CH 55V 100A TO262-3 |
|
AUIRFR5305TRIR (Infineon Technologies) |
MOSFET P-CH 55V 31A DPAK |
|
IPD034N06N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 100A TO252-3 |
|
AOD360A70Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 700V 12A TO252 |
|
VN0606L-G-P003Roving Networks / Microchip Technology |
MOSFET N-CH 60V 330MA TO92-3 |
|
IPB120N04S404ATMA1Rochester Electronics |
MOSFET N-CH 40V 120A D2PAK |
|
RD3L050SNTL1ROHM Semiconductor |
MOSFET N-CH 60V 5A TO252 |
|
AO3421Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 2.6A SOT23-3L |
|
FDMC7582Rochester Electronics |
MOSFET N-CH 25V 16.7A/49A PWR33 |
|
SUG90090E-GE3Vishay / Siliconix |
MOSFET N-CH 200V 100A TO247AC |
|
IXFX26N100PWickmann / Littelfuse |
MOSFET N-CH 1000V 26A PLUS247-3 |
|
IXFN80N50Q2Wickmann / Littelfuse |
MOSFET N-CH 500V 72A SOT227B |
|
IXFK50N85XWickmann / Littelfuse |
MOSFET N-CH 850V 50A TO264 |