English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 55 V |
| 电流 - 连续漏极 (id) @ 25°c: | 31A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | 65mOhm @ 16A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 63 nC @ 10 V |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | 1200 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | Surface Mount |
| 供应商设备包: | D-Pak |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPD034N06N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 100A TO252-3 |
|
AOD360A70Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 700V 12A TO252 |
|
VN0606L-G-P003Roving Networks / Microchip Technology |
MOSFET N-CH 60V 330MA TO92-3 |
|
IPB120N04S404ATMA1Rochester Electronics |
MOSFET N-CH 40V 120A D2PAK |
|
RD3L050SNTL1ROHM Semiconductor |
MOSFET N-CH 60V 5A TO252 |
|
AO3421Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 2.6A SOT23-3L |
|
FDMC7582Rochester Electronics |
MOSFET N-CH 25V 16.7A/49A PWR33 |
|
SUG90090E-GE3Vishay / Siliconix |
MOSFET N-CH 200V 100A TO247AC |
|
IXFX26N100PWickmann / Littelfuse |
MOSFET N-CH 1000V 26A PLUS247-3 |
|
IXFN80N50Q2Wickmann / Littelfuse |
MOSFET N-CH 500V 72A SOT227B |
|
IXFK50N85XWickmann / Littelfuse |
MOSFET N-CH 850V 50A TO264 |
|
IPI80N08S406AKSA1Rochester Electronics |
MOSFET N-CH 80V 80A TO262-3-1 |
|
IXTA120P065T-TRLWickmann / Littelfuse |
MOSFET P-CH 65V 120A TO263 |
