类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 330mA (Tj) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 3Ohm @ 1A, 10V |
vgs(th) (最大值) @ id: | 2V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 50 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 1W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-92-3 |
包/箱: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IPB120N04S404ATMA1Rochester Electronics |
MOSFET N-CH 40V 120A D2PAK |
|
RD3L050SNTL1ROHM Semiconductor |
MOSFET N-CH 60V 5A TO252 |
|
AO3421Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 2.6A SOT23-3L |
|
FDMC7582Rochester Electronics |
MOSFET N-CH 25V 16.7A/49A PWR33 |
|
SUG90090E-GE3Vishay / Siliconix |
MOSFET N-CH 200V 100A TO247AC |
|
IXFX26N100PWickmann / Littelfuse |
MOSFET N-CH 1000V 26A PLUS247-3 |
|
IXFN80N50Q2Wickmann / Littelfuse |
MOSFET N-CH 500V 72A SOT227B |
|
IXFK50N85XWickmann / Littelfuse |
MOSFET N-CH 850V 50A TO264 |
|
IPI80N08S406AKSA1Rochester Electronics |
MOSFET N-CH 80V 80A TO262-3-1 |
|
IXTA120P065T-TRLWickmann / Littelfuse |
MOSFET P-CH 65V 120A TO263 |
|
FQB9N25TMRochester Electronics |
MOSFET N-CH 250V 9.4A D2PAK |
|
STP12NK80ZSTMicroelectronics |
MOSFET N-CH 800V 10.5A TO220AB |
|
FDMA410NZTSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 9.5A 6MICROFET |