English
简体中文
TVS DIODE 110V 177V DO214AB
MOSFET N-CHANNEL 100V 34A 8DFN
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Not For New Designs |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 34A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 12mOhm @ 20A, 10V |
| vgs(th) (最大值) @ id: | 2.4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 50 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2420 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 56.5W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-DFN-EP (5x6) |
| 包/箱: | 8-PowerSMD, Flat Leads |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPB60R280CFD7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 9A TO263-3-2 |
|
DMP3028LK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 27A TO252 |
|
CSD19534Q5ATTexas Instruments |
MOSFET N-CH 100V 50A 8VSON |
|
BSC016N06NSATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 30A/100A TDSON |
|
RSQ045N03HZGTRROHM Semiconductor |
MOSFET N-CH 30V 4.5A TSMT6 |
|
IRLS4030PBFRochester Electronics |
MOSFET N-CH 100V 180A D2PAK |
|
FDMC8678SRochester Electronics |
MOSFET N-CH 30V 15A/18A POWER33 |
|
IRF720Rochester Electronics |
MOSFET N-CH 400V 3.3A TO220AB |
|
SQJ848EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 40V 47A PPAK SO-8 |
|
SI2307CDS-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 3.5A SOT23-3 |
|
ZVN3306ASTZZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 270MA E-LINE |
|
PMN35EN,115Rochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
SIR664DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 60V 60A PPAK SO-8 |