English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | PowerTrench® |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 13.5A (Ta), 21A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 9.5mOhm @ 13.5A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 33 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1.585 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.5W (Ta), 42W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-PQFN (5x6) |
| 包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AUIRFS3006-7TRLRochester Electronics |
AUTOMOTIVE HEXFET N CHANNEL |
|
IRF6216PBFRochester Electronics |
AUTOMOTIVE HEXFET P-CHANNEL |
|
FDN304PRochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
NTMYS010N04CLTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 14A/38A 4LFPAK |
|
SIDR610DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 200V 8.9A/39.6A PPAK |
|
AOI4S60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 4A TO251A |
|
FDC855NSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 6.1A SUPERSOT6 |
|
SPA11N65C3XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 11A TO220-FP |
|
2SK3142-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
RCX300N20ROHM Semiconductor |
MOSFET N-CH 200V 30A TO220FM |
|
IXTP3N100D2Wickmann / Littelfuse |
MOSFET N-CH 1000V 3A TO220AB |
|
IRLU024Vishay / Siliconix |
MOSFET N-CH 60V 14A TO251AA |
|
NTH4L040N120SC1Sanyo Semiconductor/ON Semiconductor |
TRANS SJT N-CH 1200V 58A TO247-4 |
