类型 | 描述 |
---|---|
系列: | PolarP™ |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 100 V |
电流 - 连续漏极 (id) @ 25°c: | 52A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 50mOhm @ 500mA, 10V |
vgs(th) (最大值) @ id: | 4.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 60 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 2845 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 300W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220AB |
包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRF840STRRPBFVishay / Siliconix |
MOSFET N-CH 500V 8A D2PAK |
|
IXFH36N50PWickmann / Littelfuse |
MOSFET N-CH 500V 36A TO247AD |
|
IPW65R099C6FKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 38A TO247-3 |
|
IPP100N04S303AKSA1Rochester Electronics |
IPP100N04 - OPTIMOS N-CHANNEL |
|
IPB026N06NATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 25A/100A D2PAK |
|
IXTK170N10PWickmann / Littelfuse |
MOSFET N-CH 100V 170A TO264 |
|
FDBL86563-F085Rochester Electronics |
MOSFET N-CH 60V 240A 8HPSOF |
|
IPI80N03S4L-03Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPD90N06S4L06ATMA2IR (Infineon Technologies) |
MOSFET N-CH 60V 90A TO252-31 |
|
NTMYS2D2N06CLTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 31A/185A LFPAK4 |
|
FDH3632Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 12A/80A TO247-3 |
|
NVMFS5C682NLAFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 8.8A/25A 5DFN |
|
IPB60R360CFD7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 7A TO263-3-2 |