类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 600 V |
电流 - 连续漏极 (id) @ 25°c: | 4A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 2.2Ohm @ 1.4A, 10V |
vgs(th) (最大值) @ id: | 3.8V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 17.2 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 582 pF @ 50 V |
场效应管特征: | - |
功耗(最大值): | 41.6W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | ITO-220 |
包/箱: | TO-220-3 Full Pack, Isolated Tab |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
PMN42XPE,115Rochester Electronics |
MOSFET P-CH 20V 4A 6TSOP |
|
CSD25303W1015Rochester Electronics |
MOSFET P-CH 20V 3A 6DSBGA |
|
2SK2511-ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
3LP01S-K-TL-ERochester Electronics |
MOSFET P-CH 30V 0.1A SMCP |
|
SCH1433-TL-HRochester Electronics |
MOSFET N-CH 20V 3.5A 6SCH |
|
FDP020N06B-F102Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 120A TO220-3 |
|
ZVN4206AVSTZZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 600MA E-LINE |
|
EPC2038EPC |
GANFET N-CH 100V 500MA DIE |
|
IRLZ34NPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 30A TO220AB |
|
XP202A0003MR-GTorex Semiconductor Ltd. |
MOSFET P-CH 30V 3A SOT23 |
|
IPN70R1K5CEATMA1IR (Infineon Technologies) |
MOSFET N-CH 700V 5.4A SOT223 |
|
BUK6209-30C,118Rochester Electronics |
MOSFET N-CH 30V 50A DPAK |
|
STW70N60M2STMicroelectronics |
MOSFET N-CH 600V 68A TO247 |