FIXED IND 56UH 1.65A 130 MOHM
MOSFET N-CH 40V 120A TO220AB
BOX ABS ALMOND 5.62"L X 3.25"W
类型 | 描述 |
---|---|
系列: | HEXFET® |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 40 V |
电流 - 连续漏极 (id) @ 25°c: | 120A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 2.5mOhm @ 100A, 10V |
vgs(th) (最大值) @ id: | 3.9V @ 100µA |
栅极电荷 (qg) (max) @ vgs: | 161 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 5193 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 163W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220AB |
包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
DMP6110SVTQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 60V 7.3A TSOT26 |
|
SI4427BDY-T1-E3Vishay / Siliconix |
MOSFET P-CH 30V 9.7A 8SO |
|
IRFD110PBFVishay / Siliconix |
MOSFET N-CH 100V 1A 4DIP |
|
IRF200P222IR (Infineon Technologies) |
MOSFET N-CH 200V 182A TO247AC |
|
STP6N90K5STMicroelectronics |
MOSFET N-CH 900V 6A TO220 |
|
SIR164ADP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 35.9A/40A PPAK |
|
STL55NH3LLSTMicroelectronics |
MOSFET N-CH 30V 55A POWERFLAT |
|
SUP90142E-GE3Vishay / Siliconix |
MOSFET N-CH 200V 90A TO220AB |
|
IXFY8N65X2Wickmann / Littelfuse |
MOSFET N-CH 650V 8A TO252AA |
|
IRFR420TRPBF-BE3Vishay / Siliconix |
MOSFET N-CH 500V 2.4A DPAK |
|
FDB2572Rochester Electronics |
MOSFET N-CH 150V 4A/29A TO263AB |
|
TN0620N3-GRoving Networks / Microchip Technology |
MOSFET N-CH 200V 250MA TO92-3 |
|
TK560P65Y,RQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CHANNEL 650V 7A DPAK |