类型 | 描述 |
---|---|
系列: | ThunderFET® |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 200 V |
电流 - 连续漏极 (id) @ 25°c: | 90A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 7.5V, 10V |
rds on (max) @ id, vgs: | 15.2mOhm @ 30A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 87 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 31200 pF @ 100 V |
场效应管特征: | - |
功耗(最大值): | 375W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220AB |
包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IXFY8N65X2Wickmann / Littelfuse |
MOSFET N-CH 650V 8A TO252AA |
|
IRFR420TRPBF-BE3Vishay / Siliconix |
MOSFET N-CH 500V 2.4A DPAK |
|
FDB2572Rochester Electronics |
MOSFET N-CH 150V 4A/29A TO263AB |
|
TN0620N3-GRoving Networks / Microchip Technology |
MOSFET N-CH 200V 250MA TO92-3 |
|
TK560P65Y,RQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CHANNEL 650V 7A DPAK |
|
IPA65R600E6XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 7.3A TO220-FP |
|
FQB47P06TM-AM002Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 47A D2PAK |
|
DMPH4025SFVWQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 40V PWRDI3333 |
|
IPD90P04P4L04ATMA2IR (Infineon Technologies) |
MOSFET P-CH 40V 90A TO252-3 |
|
IXFA7N100PWickmann / Littelfuse |
MOSFET N-CH 1000V 7A TO263 |
|
BSP321PH6327XTSA1IR (Infineon Technologies) |
MOSFET P-CH 100V 980MA SOT223-4 |
|
TN2106K1-GRoving Networks / Microchip Technology |
MOSFET N-CH 60V 280MA TO236AB |
|
2SK1432Rochester Electronics |
N-CHANNEL POWER MOSFET |