类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101 |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 40 V |
电流 - 连续漏极 (id) @ 25°c: | 8.7A (Ta), 40A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 25mOhm @ 30A, 10V |
vgs(th) (最大值) @ id: | 1.8V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 38.6 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1918 pF @ 20 V |
场效应管特征: | - |
功耗(最大值): | 2.3W (Ta), 60W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount, Wettable Flank |
供应商设备包: | PowerDI3333-8 (SWP) Type UX |
包/箱: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IPD90P04P4L04ATMA2IR (Infineon Technologies) |
MOSFET P-CH 40V 90A TO252-3 |
|
IXFA7N100PWickmann / Littelfuse |
MOSFET N-CH 1000V 7A TO263 |
|
BSP321PH6327XTSA1IR (Infineon Technologies) |
MOSFET P-CH 100V 980MA SOT223-4 |
|
TN2106K1-GRoving Networks / Microchip Technology |
MOSFET N-CH 60V 280MA TO236AB |
|
2SK1432Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRFP048PBFVishay / Siliconix |
MOSFET N-CH 60V 70A TO247-3 |
|
FDD3690Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 22A DPAK |
|
RM90N40DFRectron USA |
MOSFET N-CHANNEL 40V 90A 8DFN |
|
IPW60R099P7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 31A TO247-3 |
|
NTZS3151PT1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 860MA SOT563 |
|
FDP120AN15A0Rochester Electronics |
MOSFET N-CH 150V 2.8A/14A TO220 |
|
AON2408Alpha and Omega Semiconductor, Inc. |
MOSFET N CH 20V 8A DFN 2x2B |
|
TK14G65W,RQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 13.7A D2PAK |