类型 | 描述 |
---|---|
系列: | POWER MOS 8™ |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 500 V |
电流 - 连续漏极 (id) @ 25°c: | 30A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 190mOhm @ 14A, 10V |
vgs(th) (最大值) @ id: | 5V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 115 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 4525 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 415W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | D3Pak |
包/箱: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SI2323DS-T1-E3Vishay / Siliconix |
MOSFET P-CH 20V 3.7A SOT23-3 |
|
IXFX140N25TWickmann / Littelfuse |
MOSFET N-CH 250V 140A PLUS247-3 |
|
DMTH10H025SK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 46.3A TO252 T&R |
|
SIHF6N65E-GE3Vishay / Siliconix |
MOSFET N-CH 650V 7A TO220 |
|
APT53F80JRoving Networks / Microchip Technology |
MOSFET N-CH 800V 57A ISOTOP |
|
SIHG47N60AE-GE3Vishay / Siliconix |
MOSFET N-CH 600V 43A TO247AC |
|
AOT5N100Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 1000V 4A TO220 |
|
FDMC8010DCSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 37A 8PQFN |
|
APT6021SFLLGRoving Networks / Microchip Technology |
MOSFET N-CH 600V 29A D3PAK |
|
SUD15N15-95-E3Vishay / Siliconix |
MOSFET N-CH 150V 15A TO252 |
|
SI7370DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 60V 9.6A PPAK SO-8 |
|
FQA38N30Rochester Electronics |
38.4A, 300V, N-CHANNEL, MOSFET |
|
IPI80N06S2L11AKSA2Rochester Electronics |
MOSFET N-CH 55V 80A TO262-3 |