English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Obsolete |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 2.4A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 2.5V, 4.5V |
| rds on (max) @ id, vgs: | 91mOhm @ 1.2A, 4.5V |
| vgs(th) (最大值) @ id: | 1.4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 9.6 nC @ 5 V |
| vgs (最大值): | 12V |
| 输入电容 (ciss) (max) @ vds: | 800 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 350mW (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | SOT-23F |
| 包/箱: | SOT-23-3 Flat Leads |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STD110N02RT4GRochester Electronics |
SINGLE N-CHANNEL 24V, 110A |
|
SIHA15N50E-E3Vishay / Siliconix |
MOSFET N-CH 500V 14.5A TO220 |
|
IPD65R420CFDBTMA1Rochester Electronics |
MOSFET N-CH 650V 8.7A TO252-3 |
|
IRFP440Rochester Electronics |
MOSFET N-CH 500V 8.8A TO247-3 |
|
GA08JT17-247GeneSiC Semiconductor |
TRANS SJT 1700V 8A TO247AB |
|
CSD22202W15Texas Instruments |
MOSFET P-CH 8V 10A 9DSBGA |
|
SIHG20N50E-GE3Vishay / Siliconix |
MOSFET N-CH 500V 19A TO247AC |
|
AUIRFR3607Rochester Electronics |
AUTOMOTIVE HEXFET N CHANNEL |
|
IPA65R600C6XKSA1Rochester Electronics |
MOSFET N-CH 650V 7.3A TO220 |
|
AUIRFU540ZRochester Electronics |
MOSFET N-CH 100V 35A I-PAK |
|
NDD02N60Z-1GRochester Electronics |
MOSFET N-CH 600V 2.2A IPAK |
|
BSZ097N10NS5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 8A/40A TSDSON |
|
FCPF165N65S3L1Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 19A TO220F-3 |
