类型 | 描述 |
---|---|
系列: | SuperFET® III |
包裹: | Tube |
零件状态: | Last Time Buy |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 650 V |
电流 - 连续漏极 (id) @ 25°c: | 19A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 165mOhm @ 9.5A, 10V |
vgs(th) (最大值) @ id: | 4.5V @ 1.9mA |
栅极电荷 (qg) (max) @ vgs: | 35 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 1415 pF @ 400 V |
场效应管特征: | - |
功耗(最大值): | 35W (Tc) |
工作温度: | -55°C ~ 150°C |
安装类型: | Through Hole |
供应商设备包: | TO-220F-3 |
包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
DMP1022UFDEQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 12V 9.1A 6UDFN |
|
NTMFS4985NFT3GRochester Electronics |
MOSFET N-CH 30V 17.5A/65A 5DFN |
|
G3R20MT12NGeneSiC Semiconductor |
SIC MOSFET N-CH 105A SOT227 |
|
IPD050N10N5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 80A TO252-3 |
|
IPB65R190C7ATMA2IR (Infineon Technologies) |
MOSFET N-CH 650V 13A TO263-3 |
|
PMPB12UNEXNexperia |
MOSFET N-CH 20V 11.4A 6DFN |
|
APT56F50LRoving Networks / Microchip Technology |
MOSFET N-CH 500V 56A TO264 |
|
BF20-40E6814Rochester Electronics |
RF N-CHANNEL MOSFET |
|
FQA15N70Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
NTD4969N-1GRochester Electronics |
MOSFET N-CH 30V 9.4A/41A IPAK |
|
IRFR4105PBFRochester Electronics |
MOSFET N-CH 55V 27A DPAK |
|
SPD01N60C3BTMA1Rochester Electronics |
MOSFET N-CH 650V 800MA TO252-3 |
|
RQ6P015SPTRROHM Semiconductor |
MOSFET P-CH 100V 1.5A TSMT6 |