English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101, OptiMOS™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 80 V |
| 电流 - 连续漏极 (id) @ 25°c: | 120A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 2.8mOhm @ 100A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 223µA |
| 栅极电荷 (qg) (max) @ vgs: | 167 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 11550 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 278W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | PG-TO220-3-1 |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STE145N65M5STMicroelectronics |
MOSFET N-CH 650V 143A ISOTOP |
|
BUK7880-55,135Rochester Electronics |
MOSFET N-CH 55V 3.5A SOT223 |
|
STB11NM60FDT4STMicroelectronics |
MOSFET N-CH 600V 11A D2PAK |
|
STF5NK100ZSTMicroelectronics |
MOSFET N-CH 1000V 3.5A TO220FP |
|
STB18NF25STMicroelectronics |
MOSFET N-CH 250V 17A D2PAK |
|
GKI07113Sanken Electric Co., Ltd. |
MOSFET N-CH 75V 9A 8DFN |
|
IRL640PBF-BE3Vishay / Siliconix |
MOSFET N-CH 200V 17A TO220AB |
|
2SK1934-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
PSMN3R4-30BLE,118Nexperia |
MOSFET N-CH 30V 120A D2PAK |
|
SIRA58DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 60A PPAK SO-8 |
|
STW20N95DK5STMicroelectronics |
MOSFET N-CH 950V 18A TO247 |
|
PMZB320UPEYLNexperia |
MOSFET P-CH 30V 1A DFN1006B-3 |
|
NTMFS4C10NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 8.2A 5DFN |
