类型 | 描述 |
---|---|
系列: | HiPerFET™, PolarP2™ |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 1200 V |
电流 - 连续漏极 (id) @ 25°c: | 13A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 630mOhm @ 10A, 10V |
vgs(th) (最大值) @ id: | 6.5V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 193 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 11100 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 290W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | ISOPLUS247™ |
包/箱: | ISOPLUS247™ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
DMN6066SSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 3.7A 8SO |
|
STP27N60M2-EPSTMicroelectronics |
MOSFET N-CH 600V 20A TO220 |
|
STW43N60DM2STMicroelectronics |
MOSFET N-CH 600V 34A TO247 |
|
SI7113ADN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 100V 10.8A PPAK |
|
IRLMS1902TRPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 3.2A MICRO6 |
|
STH400N4F6-2STMicroelectronics |
MOSFET N-CH 40V 180A H2PAK-2 |
|
STP310N10F7STMicroelectronics |
MOSFET N CH 100V 180A TO-220 |
|
FDW252PRochester Electronics |
MOSFET P-CH 20V 8.8A 8TSSOP |
|
IPD06N03LB GIR (Infineon Technologies) |
MOSFET N-CH 30V 50A TO252-3 |
|
UF3SC065030D8SUnitedSiC |
SICFET N-CH 650V 18A 4DFN |
|
IPP65R190CFD7AAKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 14A TO220-3 |
|
BUK9Y30-75B,115Nexperia |
MOSFET N-CH 75V 34A LFPAK56 |
|
PMXB65UPEZNexperia |
MOSFET P-CH 12V 3.2A DFN1010D-3 |