English
简体中文
MOSFET N-CH 60V 16A/70A 8WDFN
HOUSING PPE BLK 6.52"L X 3.78"W
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 16A (Ta), 70A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 6.5mOhm @ 35A, 10V |
| vgs(th) (最大值) @ id: | 2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 20 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1400 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.2W (Ta), 63W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-WDFN (3.3x3.3) |
| 包/箱: | 8-PowerWDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDB20N50FSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 20A D2PAK |
|
ZVN4306GTAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 2.1A SOT223 |
|
SI7846DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 150V 4A PPAK SO-8 |
|
IPAW70R600CEXKSA1Rochester Electronics |
MOSFET N-CH 700V 10.5A TO220-31 |
|
NTMFS4899NFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 10.4A/75A 5DFN |
|
SCT3030KLHRC11ROHM Semiconductor |
SICFET N-CH 1200V 72A TO247N |
|
SQD40N10-25_GE3Vishay / Siliconix |
MOSFET N-CH 100V 40A TO252 |
|
FDS4141-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 40V 10.8A 8SOIC |
|
IXTA6N100D2Wickmann / Littelfuse |
MOSFET N-CH 1000V 6A TO263 |
|
SI8806DB-T2-E1Vishay / Siliconix |
MOSFET N-CH 12V 4MICROFOOT |
|
C2M1000170DWolfspeed - a Cree company |
SICFET N-CH 1700V 4.9A TO247-3 |
|
FQB15P12TMRochester Electronics |
MOSFET P-CH 120V 15A D2PAK |
|
QS5U27TRROHM Semiconductor |
MOSFET P-CH 20V 1.5A TSMT5 |