类型 | 描述 |
---|---|
系列: | DeepGATE™, STripFET™ VI |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 80A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 2.8mOhm @ 40A, 10V |
vgs(th) (最大值) @ id: | 2.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 29 nC @ 4.5 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 3700 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 110W (Tc) |
工作温度: | 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | DPAK |
包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NTMFS4833NAT1GRochester Electronics |
MOSFET N-CH 30V 16A/191A 5DFN |
|
TSM60NB380CF C0GTSC (Taiwan Semiconductor) |
MOSFET N-CH 600V 11A ITO220S |
|
R6008FNJTLROHM Semiconductor |
MOSFET N-CH 600V 8A LPTS |
|
STB170NF04STMicroelectronics |
MOSFET N-CH 40V 80A D2PAK |
|
BSC079N10NSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 13.4A 8TDSON |
|
FDMC8015LRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 7 |
|
AOWF412Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 7.8A/30A |
|
IRFB4137PBFIR (Infineon Technologies) |
MOSFET N-CH 300V 38A TO220 |
|
IPS050N03LGRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRF6623TRPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 16A DIRECTFET |
|
SQM50028EM_GE3Vishay / Siliconix |
MOSFET N-CH 60V 120A TO263-7 |
|
NVMFS5C670NLAFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 17A/71A 5DFN |
|
IRFU420PBFVishay / Siliconix |
MOSFET N-CH 500V 2.4A TO251AA |